august 2001 ? 2001 fairchild semiconductor corporation FDFS2P102A rev a1(w) FDFS2P102A integrated p-channel powertrench ? ? ? ? mosfet and schottky diode general description the FDFS2P102A combines the exceptional performance of fairchild's powertrench mosfet technology with a very low forward voltage drop schottky barrier rectifier in an so-8 package. this device is designed specifically as a single package solution for dc to dc converters. it features a fast switching, low gate charge mosfet with very low on- state resistance. the independently connected schottky diode allows its use in a variety of dc/dc converter topologies. features ? ?3.3 a, ?20v r ds(on) = 125 m ? @ v gs = ?10 v r ds(on) = 200 m ? @ v gs = ?4.5 v ? v f < 0.39 v @ 1 a (t j = 125 c) v f < 0.47 v @ 1 a v f < 0.58 v @ 2 a ? schottky and mosfet incorporated into single power surface mount so-8 package ? electrically independent schottky and mosfet pinout for design flexibility a a s g c c d d pin 1 so-8 8 1 7 2 6 3 5 4 a a s g c c d d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss mosfet drain-source voltage ? 20 v v gss mosfet gate-source voltage 20 v i d drain current ? continuous (note 1a) ? 3.3 a ? pulsed ? 10 power dissipation for dual operation 2 power dissipation for single operation (note 1a) 1.6 (note 1b) 1 p d (note 1c) 0.9 w t j , t stg operating and storage junction temperature range ? 55 to +150 c v rrm schottky repetitive peak reverse voltage 20 v i o schottky average forward current (note 1a) 1 a package marking and ordering information device marking device reel size tape width quantity FDFS2P102A FDFS2P102A 13?? 12mm 2500 units FDFS2P102A
FDFS2P102A rev a1(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?23 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?1 ?1.8 ?3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 4.4 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?3.3 a v gs = ?4.5 v, i d = ?2.5 a v gs =?10 v, i d =?3.3a, t j =125 c 96 152 137 125 200 190 m ? i d(on) on?state drain current v gs = ?10 v, v ds = ?5 v ?10 a g fs forward transconductance v ds = ?5v, i d = ?3.3 a 4.6 s dynamic characteristics c iss input capacitance 182 pf c oss output capacitance 60 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 24 pf switching characteristics (note 2) t d(on) turn?on delay time 5 10 ns t r turn?on rise time 14 52 ns t d(off) turn?off delay time 11 20 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?10 v, r gen = 6 ? 2 4 ns q g total gate charge 2.1 3.0 nc q gs gate?source charge 1.0 nc q gd gate?drain charge v ds = ?10 v, i d = ?3.3 a, v gs = ?5 v 0.6 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.3 a (note 2) ?0.8 ?1.2 v schottky diode characteristics i r reverse leakage v r = 20 v t j = 25 c 50 a t j = 125 c 18 ma v f forward voltage i f = 1 a t j = 25 c 0.47 v t j = 125 c 0.39 i f = 2 a t j = 25 c 0.58 t j = 125 c 0.53 FDFS2P102A
FDFS2P102A rev a1(w) thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 78c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125c/w when mounted on a 0.02 in 2 pad of 2 oz copper c) 135c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDFS2P102A
FDFS2P102A rev a1(w) typical characteristics 0 2 4 6 8 10 012345 -v ds , drain-source voltage (v) -i d , drain-source current (a ) v gs = -10v -4.5v -3.5v -4.0v -6.0v -5.0v -7.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0246810 - i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -4.0v -7.0v -4.5v -10v -6.0v -5.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = -3.3a v gs = -10v 0.04 0.1 0.16 0.22 0.28 0.34 0.4 0.46 0.52 246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -1.7a a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 2 4 6 8 10 12345 -v gs , gate to source voltage (v) -i d , drain current (a ) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a ) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDFS2P102A
FDFS2P102A rev a1(w) typical characteristics 0 2 4 6 8 10 01234 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -3.3a v ds = -5v -10v -15v 0 50 100 150 200 250 300 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v f , forward voltage (v) i f , forward leakage current (a ) t j = 25 o c t j = 125 o c 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 0 5 10 15 20 v r , reverse voltage (v) i r , reverse le akage current (a ) t j = 25 o c t j = 125 o c figure 9. schottky diode forward voltage. figure 10. schottky diode reverse current. 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 135 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDFS2P102A
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